A 3.5 GHz CMOS Doherty power amplifier with integrated diode linearizer targeted for WiMax applications

Author

Xian Cui ; Roblin, P. ; Jongsoo Lee ; Wan Rone Liou ; Young Gi Kim

Author_Institution

Ohio State Univ., Columbus

fYear

2007

fDate

5-8 Aug. 2007

Firstpage

465

Lastpage

468

Abstract

In this work, a novel integrated Doherty power amplifier in 0.18 mum CMOS process is presented for potential WiMax applications at 3.5 GHz. Doherty configuration with cascode transistors is adopted to achieve high efficiency and output power. The integrated diode linearizer is first demonstrated to use on the cascode transistor to improve the linearity of Doherty PA. The proposed power amplifier provides a maximum output power of 24.44 dBm and a power added efficiency (PAE) as high as 43% at 3.5 GHz operation frequency. At 1-dB compression point this PA exhibits 23.63 dBm of output power with 36.1% PAE. The third order inter-modulation (IMD3) comparison obtained from two-tone test, reveals the linearity improvement from the diode linearizer. Layout and corner simulations results are also included.

Keywords

CMOS integrated circuits; WiMax; intermodulation; power amplifiers; transistors; CMOS process; Doherty power amplifier; WiMAX application; cascode transistor; frequency 3.5 GHz; integrated diode linearizer; power added efficiency; size 0.18 mum; third order intermodulation; CMOS process; Diodes; Frequency; High power amplifiers; Linearity; Operational amplifiers; Power amplifiers; Power generation; Testing; WiMAX;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems, 2007. MWSCAS 2007. 50th Midwest Symposium on

Conference_Location

Montreal, Que.

ISSN

1548-3746

Print_ISBN

978-1-4244-1175-7

Type

conf

DOI

10.1109/MWSCAS.2007.4488629

Filename

4488629