Epoxy-containing ArF resists with narrow molecular weight distribution

ArF lithography is a promising technology for producing fine patterns in microelectronic devices. Many types of resist materials for ArF lithography have been developed and very fine images were obtained. However, there are still some problems to be solved to enhance the resist performance. Poor etch resistance, pattern collapse and the line edge roughness of the resist patterns are big concerns. Although many parameters are participated in pattern formation based on chemically amplified resist systems, to improve the edge roughness, it is important for exposed resist polymers to be uniformly dissolved in developers. Dissolution rate of resist molecules depends on molecular weight and molecular weight distribution. In this paper, we report the synthesis and resist performance of epoxy-containing ArF resist polymer with narrow molecular weight distribution.