Vertical field HMSM photodetector

Author

Xia Zhao ; Huang, Hung-Jen ; Chen, Xiying ; Nabet, Bahram

Author_Institution

Dept. of Electr. & Comput. Eng., Drexel Univ., Philadelphia, PA, USA

Volume

3

fYear

2004

fDate

18-21 Oct. 2004

Firstpage

2328

Abstract

We have previously fabricated δ-doped heterostructure metal-semiconductor-metal (HMSM) photodetectors with a time response below the 10 ps level, which were much faster than devices of equivalent dimensions. Simulation results on static and dynamic aspects of device behavior indicate the improved performance is partially due to the δ-doping layer which transforms the lateral electric field to a vertical orientation. A direct result is that, by following the vertical field, photogenerated electrons reach contacts via the two-dimensional electron gas (2DEG) layer in a much shorter time, thus enhancing the transit time dependent dynamic performance.

Keywords

doping profiles; metal-semiconductor-metal structures; photodetectors; semiconductor device models; transient response; two-dimensional electron gas; δ-doped heterostructure; δ-doping layer; 10 ps; 2D electron gas; 2DEG layer; AlGaAs-GaAs; HMSM photodetector time response; heterostructure metal-semiconductor-metal photodetectors; lateral/vertical electric field orientation transformation; photogenerated electrons; transit time dependent dynamic performance; vertical field photodetector; Application specific integrated circuits; Computational modeling; Computer simulation; Electrons; Fingers; Gallium arsenide; Optical computing; Photodetectors; Telephony; Time factors;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuits Technology, 2004. Proceedings. 7th International Conference on

Print_ISBN

0-7803-8511-X

Type

conf

DOI

10.1109/ICSICT.2004.1435312

Filename

1435312