Elastic-Vt CMOS circuits for multiple on-chip power control

Author

Mizuno, M. ; Furuta, K. ; Narita, S. ; Abiko, H. ; Sakai, I. ; Yamashina, M.

Author_Institution

NEC Corp., Kanagawa, Japan

fYear

1996

fDate

10-10 Feb. 1996

Firstpage

300

Lastpage

301

Abstract

The elastic-Vt CMOS (EVTCMOS) circuit design controls MOS transistor source (not substrate) voltages, so fabrication requires no special steps. The post-fabrication threshold voltages can be switched back and forth between high Vt (sleep mode) and low Vt (active mode), and can be also controlled as a means of reducing the sensitivity to device-parameter deviations and operating-environment variations. This results in reduction of switching time between sleep and active modes, and in reduced static power consumption in sleep mode.

Keywords

CMOS digital integrated circuits; integrated circuit design; integrated circuit technology; large scale integration; EVTCMOS; MOS transistor source; active mode; device-parameter deviations; digital ICs; elastic-Vt CMOS; multiple on-chip power control; operating-environment variations; post-fabrication threshold voltages; sensitivity; sleep mode; static power consumption; switching time; Circuits; Energy consumption; Energy management; Fabrication; MOS devices; MOSFETs; Power control; Power dissipation; Threshold voltage; Voltage control;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Circuits Conference, 1996. Digest of Technical Papers. 42nd ISSCC., 1996 IEEE International

Conference_Location

San Francisco, CA, USA

ISSN

0193-6530

Print_ISBN

0-7803-3136-2

Type

conf

DOI

10.1109/ISSCC.1996.488627

Filename

488627