• DocumentCode
    3271177
  • Title

    Temporal Performance Degradation under RTN: Evaluation and Mitigation for Nanoscale Circuits

  • Author

    Luo, Hong ; Wang, Yu ; Cao, Yu ; Xie, Yuan ; Ma, Yuchun ; Yang, Huazhong

  • Author_Institution
    Dept. of E.E., Tsinghua Univ., Beijing, China
  • fYear
    2012
  • fDate
    19-21 Aug. 2012
  • Firstpage
    183
  • Lastpage
    188
  • Abstract
    Random telegraph noise (RTN) is one of the critical reliability concerns in nanoscale circuit design, and it is important to consider the impact of RTN on the circuits´ temporal performance. This paper proposes a framework to evaluate the RTN-induced performance degradation and variation of digital circuits, and the evaluation results show that RTN can result in 54.4% degradation and 59.9% variation on the circuit delay at 16nm technology node. Power supply tuning and gate sizing techniques are investigated to demonstrate the impact of such circuit-level techniques on mitigating the RTN effect.
  • Keywords
    digital circuits; integrated circuit design; nanotechnology; circuit delay; critical reliability concerns; digital circuits; gate sizing techniques; nanoscale circuit design; power supply tuning; random telegraph noise; size 16 nm; temporal performance degradation; Degradation; Delay; Digital circuits; Integrated circuit modeling; Logic gates; Monte Carlo methods; Power supplies; Mitigation technique; Performance degradation; Random telegraph noise;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI (ISVLSI), 2012 IEEE Computer Society Annual Symposium on
  • Conference_Location
    Amherst, MA
  • ISSN
    2159-3469
  • Print_ISBN
    978-1-4673-2234-8
  • Type

    conf

  • DOI
    10.1109/ISVLSI.2012.35
  • Filename
    6296470