DocumentCode
3271177
Title
Temporal Performance Degradation under RTN: Evaluation and Mitigation for Nanoscale Circuits
Author
Luo, Hong ; Wang, Yu ; Cao, Yu ; Xie, Yuan ; Ma, Yuchun ; Yang, Huazhong
Author_Institution
Dept. of E.E., Tsinghua Univ., Beijing, China
fYear
2012
fDate
19-21 Aug. 2012
Firstpage
183
Lastpage
188
Abstract
Random telegraph noise (RTN) is one of the critical reliability concerns in nanoscale circuit design, and it is important to consider the impact of RTN on the circuits´ temporal performance. This paper proposes a framework to evaluate the RTN-induced performance degradation and variation of digital circuits, and the evaluation results show that RTN can result in 54.4% degradation and 59.9% variation on the circuit delay at 16nm technology node. Power supply tuning and gate sizing techniques are investigated to demonstrate the impact of such circuit-level techniques on mitigating the RTN effect.
Keywords
digital circuits; integrated circuit design; nanotechnology; circuit delay; critical reliability concerns; digital circuits; gate sizing techniques; nanoscale circuit design; power supply tuning; random telegraph noise; size 16 nm; temporal performance degradation; Degradation; Delay; Digital circuits; Integrated circuit modeling; Logic gates; Monte Carlo methods; Power supplies; Mitigation technique; Performance degradation; Random telegraph noise;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI (ISVLSI), 2012 IEEE Computer Society Annual Symposium on
Conference_Location
Amherst, MA
ISSN
2159-3469
Print_ISBN
978-1-4673-2234-8
Type
conf
DOI
10.1109/ISVLSI.2012.35
Filename
6296470
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