DocumentCode
3272102
Title
A 5.7 GHz Hiperlan SiGe BiCMOS voltage-controlled oscillator and phase-locked-loop frequency synthesizer
Author
Klepser, B.-U.H. ; Scholz, M. ; Kucera, J.J.
Author_Institution
Infineon Technol., Munich, Germany
fYear
2001
fDate
20-22 May 2001
Firstpage
61
Lastpage
64
Abstract
A SiGe BiCMOS 5.5-6.4 GHz frequency synthesizer is presented. The synthesizer consists of an oscillator with a phase noise of -110 dBc/Hz at 1 MHz offset, and a 10 GHz phase-lock-loop circuit with an in-band phase noise of -79 dBc/Hz. The power consumption of the ICs was 9 mW and 17 mW, respectively.
Keywords
BiCMOS analogue integrated circuits; Ge-Si alloys; MMIC oscillators; frequency synthesizers; low-power electronics; phase locked loops; phase noise; semiconductor materials; transceivers; wireless LAN; 10 GHz; 17 mW; 5.5 to 6.4 GHz; 5.7 GHz; 9 mW; BiCMOS voltage-controlled oscillator; Hiperlan; SiGe; frequency synthesizer; phase noise; phase-locked-loop; power consumption; BiCMOS integrated circuits; Frequency conversion; Frequency synthesizers; Germanium silicon alloys; Logic; Phase locked loops; Phase noise; Silicon germanium; Voltage-controlled oscillators; Wireless LAN;
fLanguage
English
Publisher
ieee
Conference_Titel
Radio Frequency Integrated Circuits (RFIC) Symposium, 2001. Digest of Papers. 2001 IEEE
Conference_Location
Phoenix, AZ, USA
ISSN
1529-2517
Print_ISBN
0-7803-6601-8
Type
conf
DOI
10.1109/RFIC.2001.935642
Filename
935642
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