1W output power from a 10 μm aperture 940 nm-laser diode with a RISAS-structure

Author

Sebastian, J. ; Bugge, F. ; Erbert, G. ; Wenzel, H. ; John, W. ; Rechenberg, I. ; Pietzker, C. ; Vogel, K. ; Weyers, M. ; Tränkle, G.

Author_Institution

Ferdinand Braun Inst. fur Hochstfrequenztech., Berlin, Germany

Volume

2

fYear

1997

fDate

10-13 Nov 1997

Firstpage

488

Abstract

There is great demand for high power laser diodes with a diffraction limited output for various applications. To overcome the limits of ridge waveguide laser diodes, new structures with a separately adjustable lateral optical and electrical confinement are under investigation. We demonstrate a Real-Index Guided Self Aligned (RlSAS) laser structure with emission at 940 nm realized by a two step epitaxy

Keywords

semiconductor epitaxial layers; semiconductor lasers; waveguide lasers; 1 W; 10 micron; 940 nm; RISAS structure; aperture; diffraction limited output; high power laser diode; lateral electrical confinement; lateral optical confinement; output power; real-index guided self aligned laser; two step epitaxy; Apertures; Diode lasers; Heat sinks; Optical pulses; Power generation; Space vector pulse width modulation; Threshold current;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society Annual Meeting, 1997. LEOS '97 10th Annual Meeting. Conference Proceedings., IEEE

Conference_Location

San Francisco, CA

ISSN

1092-8081

Print_ISBN

0-7803-3895-2

Type

conf

DOI

10.1109/LEOS.1997.645532

Filename

645532