DocumentCode
3272660
Title
A New CMOS Current Reference with High Order Temperature Compensation
Author
Hao, Zhou ; Bo, Zhang ; Zhao-Ji, Li ; Ping, Luo
Author_Institution
Sch. of Microelectron. & Solid-State Electron., Univ. of Electron. Sci. & Technol. of China, Chengdu
Volume
4
fYear
2006
fDate
25-28 June 2006
Firstpage
2189
Lastpage
2192
Abstract
A new high order CMOS temperature compensated current reference is proposed in this paper, which is accomplished by two first order temperature compensation current references. The novel circuit exploits the temperature characteristics of integrated-circuit resistors and gate-source voltage of MOS transistors working in weak inversion. The proposed circuit, designed with a 0.6 mum standard CMOS technology, gives a good temperature coefficient of 31 ppm/degC [-50~100degC] at a 1.8 V supply, and also achieves line regulation of 0.01%/V and -120 dB PSR at 1 MHz. Comparing with other presented work, the proposed circuit shows better temperature coefficient and line regulation
Keywords
CMOS integrated circuits; MOSFET; compensation; reference circuits; CMOS current reference; MOS transistors; high order temperature compensation; integrated-circuit resistors; CMOS technology; Channel bank filters; Circuit stability; Integrated circuit technology; MOSFETs; Photonic band gap; Resistors; Silicon; Temperature dependence; Threshold voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Communications, Circuits and Systems Proceedings, 2006 International Conference on
Conference_Location
Guilin
Print_ISBN
0-7803-9584-0
Electronic_ISBN
0-7803-9585-9
Type
conf
DOI
10.1109/ICCCAS.2006.285111
Filename
4064358
Link To Document