• DocumentCode
    3272660
  • Title

    A New CMOS Current Reference with High Order Temperature Compensation

  • Author

    Hao, Zhou ; Bo, Zhang ; Zhao-Ji, Li ; Ping, Luo

  • Author_Institution
    Sch. of Microelectron. & Solid-State Electron., Univ. of Electron. Sci. & Technol. of China, Chengdu
  • Volume
    4
  • fYear
    2006
  • fDate
    25-28 June 2006
  • Firstpage
    2189
  • Lastpage
    2192
  • Abstract
    A new high order CMOS temperature compensated current reference is proposed in this paper, which is accomplished by two first order temperature compensation current references. The novel circuit exploits the temperature characteristics of integrated-circuit resistors and gate-source voltage of MOS transistors working in weak inversion. The proposed circuit, designed with a 0.6 mum standard CMOS technology, gives a good temperature coefficient of 31 ppm/degC [-50~100degC] at a 1.8 V supply, and also achieves line regulation of 0.01%/V and -120 dB PSR at 1 MHz. Comparing with other presented work, the proposed circuit shows better temperature coefficient and line regulation
  • Keywords
    CMOS integrated circuits; MOSFET; compensation; reference circuits; CMOS current reference; MOS transistors; high order temperature compensation; integrated-circuit resistors; CMOS technology; Channel bank filters; Circuit stability; Integrated circuit technology; MOSFETs; Photonic band gap; Resistors; Silicon; Temperature dependence; Threshold voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Communications, Circuits and Systems Proceedings, 2006 International Conference on
  • Conference_Location
    Guilin
  • Print_ISBN
    0-7803-9584-0
  • Electronic_ISBN
    0-7803-9585-9
  • Type

    conf

  • DOI
    10.1109/ICCCAS.2006.285111
  • Filename
    4064358