Output properties of HEMT of nanocrystalline/crystalline Si heterojunctions

Author

Shan, Feng ; Wei, Wensheng

Author_Institution

Coll. of Phys. & Electron. Inf. Eng., Wenzhou Univ., Wenzhou, China

fYear

2011

fDate

15-17 April 2011

Firstpage

579

Lastpage

584

Abstract

A kind of high electron mobility transistor (HEMT) of heterojunction with nanocrystalline Si film with crystalline Si layer (nc-Si/c-Si) was designed in this paper. Based on the output current model of HEMT, the influence of densities for interface charge states (n) at junction and mean sizes (d) of nanocrystalline Si in the film on the drain current (I_DS) from the devices was analyzed by numerical simulation. The results indicate that I_DS of the HEMTs increases with the n and d. Furthermore, the breakdown voltage (V_BR) and pinch-off voltage (V_P) vary with n and d. In addition, the device transconductance (g_m) relates closely to gate voltage (V_GS) and n.

Keywords

electric breakdown; high electron mobility transistors; nanostructured materials; HEMT; breakdown voltage; device transconductance; drain current; gate voltage; interface charge states; nanocrystalline silicon heterojunctions; output properties; pinch off voltage; Electric fields; Films; Grain size; HEMTs; Interface states; Logic gates; Silicon; grain sizes; high electron mobility transistor; interface state; nanocrystalline silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Electric Information and Control Engineering (ICEICE), 2011 International Conference on

Conference_Location

Wuhan

Print_ISBN

978-1-4244-8036-4

Type

conf

DOI

10.1109/ICEICE.2011.5777254

Filename

5777254