DocumentCode
3273256
Title
THz Emission from transient electrical currents injected into semiconductors via optical quantum interference
Author
Betz, M. ; Ménard, J-M ; Sames, C. ; Costa, L. ; Spasenovic, M. ; Bristow, A.D. ; van Driel, H.M.
Author_Institution
Dept. of Phys., Univ. of Toronto, Toronto, ON
fYear
2008
fDate
15-19 Sept. 2008
Firstpage
1
Lastpage
1
Abstract
Quantum interference between single and two photon inter-band absorption processes can lead to injection of electrical currents in direct and indirect band gap semiconductors. When the optical excitation occurs through 100 fs optical pulses the transient electrical currents emit THz radiation that can be used as a probe of the ultrafast current dynamics.
Keywords
photoexcitation; quantum interference phenomena; semiconductor materials; submillimetre wave spectra; transients; THz emission; direct band gap semiconductors; indirect band gap semiconductors; optical excitation; optical quantum interference; photon inter-band absorption; transient electrical currents; Absorption; Interference; Optical beams; Optical control; Optical polarization; Optical pulses; Photonic band gap; Probes; Stimulated emission; Ultrafast optics;
fLanguage
English
Publisher
ieee
Conference_Titel
Infrared, Millimeter and Terahertz Waves, 2008. IRMMW-THz 2008. 33rd International Conference on
Conference_Location
Pasadena, CA
Print_ISBN
978-1-4244-2119-0
Electronic_ISBN
978-1-4244-2120-6
Type
conf
DOI
10.1109/ICIMW.2008.4665456
Filename
4665456
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