• DocumentCode
    3273256
  • Title

    THz Emission from transient electrical currents injected into semiconductors via optical quantum interference

  • Author

    Betz, M. ; Ménard, J-M ; Sames, C. ; Costa, L. ; Spasenovic, M. ; Bristow, A.D. ; van Driel, H.M.

  • Author_Institution
    Dept. of Phys., Univ. of Toronto, Toronto, ON
  • fYear
    2008
  • fDate
    15-19 Sept. 2008
  • Firstpage
    1
  • Lastpage
    1
  • Abstract
    Quantum interference between single and two photon inter-band absorption processes can lead to injection of electrical currents in direct and indirect band gap semiconductors. When the optical excitation occurs through 100 fs optical pulses the transient electrical currents emit THz radiation that can be used as a probe of the ultrafast current dynamics.
  • Keywords
    photoexcitation; quantum interference phenomena; semiconductor materials; submillimetre wave spectra; transients; THz emission; direct band gap semiconductors; indirect band gap semiconductors; optical excitation; optical quantum interference; photon inter-band absorption; transient electrical currents; Absorption; Interference; Optical beams; Optical control; Optical polarization; Optical pulses; Photonic band gap; Probes; Stimulated emission; Ultrafast optics;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Infrared, Millimeter and Terahertz Waves, 2008. IRMMW-THz 2008. 33rd International Conference on
  • Conference_Location
    Pasadena, CA
  • Print_ISBN
    978-1-4244-2119-0
  • Electronic_ISBN
    978-1-4244-2120-6
  • Type

    conf

  • DOI
    10.1109/ICIMW.2008.4665456
  • Filename
    4665456