Sub-THz RTD oscillators integrated with planar horn antennas for horizontal radiation

Author

Urayama, K. ; Suzuki, S. ; Asada, M. ; Sugiyama, H. ; Yokoyam, H.

Author_Institution

Tokyo Inst. of Technol., Tokyo

fYear

2008

fDate

15-19 Sept. 2008

Firstpage

1

Lastpage

1

Abstract

Fabrication and oscillation characteristics of sub-THz RTD oscillators integrated with planar horn antennas for horizontal radiation are reported. The device consists of a GaInAs/AlAs RTD, a resonator, a waveguide, and a horn antenna on a semi-insulating InP substrate. Oscillation frequency of 455 GHz and horizontal output power of ~0.6 muW were observed. The output power is small at present because of small values of the peak-to-valley current ratio and the voltage width of the negative differential resistance region of the RTD.

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; horn antennas; indium compounds; resonant tunnelling diodes; submillimetre wave oscillators; waveguides; GaInAs-AlAs; InP; frequency 455 GHz; horizontal radiation; negative differential resistance; planar horn antennas; resonator; semi-insulating substrate; subTHz RTD oscillators; waveguide; Fabrication; Frequency; Horn antennas; Indium phosphide; Laboratories; Oscillators; Photonics; Power generation; Temperature; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Infrared, Millimeter and Terahertz Waves, 2008. IRMMW-THz 2008. 33rd International Conference on

Conference_Location

Pasadena, CA

Print_ISBN

978-1-4244-2119-0

Electronic_ISBN

978-1-4244-2120-6

Type

conf

DOI

10.1109/ICIMW.2008.4665457

Filename

4665457