DocumentCode
3273907
Title
A New CMOS Logic Anti-Fuse Cell with Programmable Contact
Author
Huang, Chia-En ; Chen, Hsin-Ming ; Chen, May-Be ; King, Ya-Chin ; Lin, Chrong-Jung
Author_Institution
Department of Electrical Engineering, National Tsing-Hua University, Hsin-Chu, Taiwan, R.O.C., Phone/Fax: +886-3-5162182/+886-3-5721804
fYear
2007
fDate
26-30 Aug. 2007
Firstpage
48
Lastpage
51
Abstract
A new fully CMOS process compatible anti-fuse device with programmable contact has been developed for advanced programmable logic applications. This anti-fuse processed by pure logic process and decoupled with transistor gate oxide has a highly stable and extremely wide on/off window. It exhibits superior disturb immunity in program and read operations. The device additionally provides the capability to adapt multiple programmable contacts for the needs of elevated data writing and reading performance. This novel anti-fuse cell is a very promising programmable logic solution with fully CMOS logic compatible process below 0.13¿m node.
Keywords
Breakdown voltage; CMOS logic circuits; CMOS process; CMOS technology; Contacts; Electric breakdown; Logic devices; Logic programming; Programmable logic arrays; Programmable logic devices; RPO; anti-fuse; contact; oxide breakdown;
fLanguage
English
Publisher
ieee
Conference_Titel
Non-Volatile Semiconductor Memory Workshop, 2007 22nd IEEE
Conference_Location
Monterey, CA, USA
Print_ISBN
1-4244-0753-2
Electronic_ISBN
1-4244-0753-2
Type
conf
DOI
10.1109/NVSMW.2007.4290576
Filename
4290576
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