• DocumentCode
    3273907
  • Title

    A New CMOS Logic Anti-Fuse Cell with Programmable Contact

  • Author

    Huang, Chia-En ; Chen, Hsin-Ming ; Chen, May-Be ; King, Ya-Chin ; Lin, Chrong-Jung

  • Author_Institution
    Department of Electrical Engineering, National Tsing-Hua University, Hsin-Chu, Taiwan, R.O.C., Phone/Fax: +886-3-5162182/+886-3-5721804
  • fYear
    2007
  • fDate
    26-30 Aug. 2007
  • Firstpage
    48
  • Lastpage
    51
  • Abstract
    A new fully CMOS process compatible anti-fuse device with programmable contact has been developed for advanced programmable logic applications. This anti-fuse processed by pure logic process and decoupled with transistor gate oxide has a highly stable and extremely wide on/off window. It exhibits superior disturb immunity in program and read operations. The device additionally provides the capability to adapt multiple programmable contacts for the needs of elevated data writing and reading performance. This novel anti-fuse cell is a very promising programmable logic solution with fully CMOS logic compatible process below 0.13¿m node.
  • Keywords
    Breakdown voltage; CMOS logic circuits; CMOS process; CMOS technology; Contacts; Electric breakdown; Logic devices; Logic programming; Programmable logic arrays; Programmable logic devices; RPO; anti-fuse; contact; oxide breakdown;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Non-Volatile Semiconductor Memory Workshop, 2007 22nd IEEE
  • Conference_Location
    Monterey, CA, USA
  • Print_ISBN
    1-4244-0753-2
  • Electronic_ISBN
    1-4244-0753-2
  • Type

    conf

  • DOI
    10.1109/NVSMW.2007.4290576
  • Filename
    4290576