• DocumentCode
    3274117
  • Title

    Optimization of 90nm Split Gate Nanocrystal Non-Volatile Memory

  • Author

    Yater, Jane A. ; Kang, S.-T. ; Steimle, R. ; Hong, C.M. ; Winstead, B. ; Herrick, M. ; Chindalore, G.

  • Author_Institution
    Freescale Semicond., Austin
  • fYear
    2007
  • fDate
    26-30 Aug. 2007
  • Firstpage
    77
  • Lastpage
    78
  • Abstract
    A 90 nm split gate nanocrystal bitcell has been demonstrated with scaled select gate oxide and adjustable control gate threshold voltage that allows for fast, low power SSI operation and top erase. This bitcell performance is excellent and holds promise for embedded flash applications.
  • Keywords
    flash memories; random-access storage; SSI operation; bitcell performance; embedded flash applications; optimization; scaled select gate oxide; size 90 nm; split gate nanocrystal nonvolatile memory; Breakdown voltage; CMOS technology; Character generation; Electron traps; Etching; Human computer interaction; Implants; Nanocrystals; Nonvolatile memory; Threshold voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Non-Volatile Semiconductor Memory Workshop, 2007 22nd IEEE
  • Conference_Location
    Monterey, CA
  • Print_ISBN
    1-4244-0753-2
  • Electronic_ISBN
    1-4244-0753-2
  • Type

    conf

  • DOI
    10.1109/NVSMW.2007.4290588
  • Filename
    4290588
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3274117