Heterostructure equivalence of step-recovery diodes for ballistic and diffusive electron resonance - a new concept for THz signal generation

Author

Hartnagel, H.L. ; Schmidt, L.P. ; Nicolae, B. ; Oprea, I. ; Schönherr, D. ; Ong, D.S. ; Schür, J. ; Ruf, M.

Author_Institution

Tech. Univ. Darmstadt, Darmstadt

fYear

2008

fDate

15-19 Sept. 2008

Firstpage

1

Lastpage

3

Abstract

A heterostructure equivalent to the well-known step recovery diode principle, arranged as a double structure gives a new nonlinear device for highly efficient harmonic THz signal generation. Like in the case of step recovery diodes, these devices exhibit promising performance especially for the generation of higher order harmonics. Theoretical and experimental results will be presented.

Keywords

III-V semiconductors; aluminium compounds; ballistic transport; charge storage diodes; gallium arsenide; p-n heterojunctions; terahertz wave generation; AlGaAs-GaAs-AlGaAs; AlGaAs/GaAs/AlGaAs heterojunctions; ballistic electron resonance; diffusive electron resonance; heterostructure equivalent; nonlinear device; pn-junctions; step recovery diodes; terahertz signal generation; Electrons; Heterojunctions; Indium compounds; Indium gallium arsenide; P-i-n diodes; Reflection; Resonance; Semiconductor diodes; Signal generators; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Infrared, Millimeter and Terahertz Waves, 2008. IRMMW-THz 2008. 33rd International Conference on

Conference_Location

Pasadena, CA

Print_ISBN

978-1-4244-2119-0

Electronic_ISBN

978-1-4244-2120-6

Type

conf

DOI

10.1109/ICIMW.2008.4665549

Filename

4665549