• DocumentCode
    327565
  • Title

    Optical projection lithography at half the Rayleigh resolution limit by two photon exposure

  • Author

    Yablonovitch, E. ; Vrijen, R.B.

  • Author_Institution
    Dept. of Electr. Eng., California Univ., Los Angeles, CA, USA
  • fYear
    1998
  • fDate
    10-14 Aug 1998
  • Firstpage
    126
  • Lastpage
    128
  • Abstract
    In recent years, with the advent of femtosecond pulse technology, two-photon absorption has commenced to be used for exposing photo-resists. It is natural to ask then, what is the spatial resolution of two-photon lithography? There has already been some discussion of resolution limits in two-photon, scanning confocal fluorescence microscopy. We will find that ordinary two-photon exposure of photo-resist merely enhances the photographic contrast, or gamma. While this improves the spatial resolution somewhat, it does so at the expense of a requirement for tighter control over the incident light intensity. Instead, we introduce a new type of exposure system employing a multiplicity of 2-photon excitation frequencies which interfere with one another to produce a super-resolution stationary image, exhibiting a true doubling of the spatial resolution
  • Keywords
    image resolution; photolithography; two-photon processes; Rayleigh limit; femtosecond pulse technology; optical projection lithography; photographic contrast; photoresist; spatial resolution; stationary image; two photon exposure; Absorption; Fluorescence; Frequency; Image resolution; Lighting control; Lithography; Microscopy; Optical pulses; Spatial resolution; Ultrafast optics;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nonlinear Optics '98: Materials, Fundamentals and Applications Topical Meeting
  • Conference_Location
    Kauai, HI
  • Print_ISBN
    0-7803-4950-4
  • Type

    conf

  • DOI
    10.1109/NLO.1998.710232
  • Filename
    710232