DocumentCode
3278786
Title
Modeling Impact Ionization in a Bipolar Transistor by means of a Direct Solution of the BTE
Author
Ventura, D. ; Gnudi, A. ; Baccarani, G.
Author_Institution
University of Bologna
fYear
1992
fDate
31 May-1 Jun 1992
Firstpage
59
Lastpage
63
Keywords
Acoustic scattering; Bipolar transistors; Distribution functions; Electrons; Equations; Impact ionization; Monte Carlo methods; Optical scattering; Predictive models; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Numerical Modeling of Processes and Devices for Integrated Circuits, 1992. NUPAD IV. Workshop on
Print_ISBN
0-7803-0516-7
Type
conf
DOI
10.1109/NUPAD.1992.673847
Filename
673847
Link To Document