DocumentCode
3279310
Title
Room temperature terahertz imaging by a GaAs-HEMT transistor associated with a THz time domain spectrometer
Author
Fatimy, A. El ; Abraham, E. ; Nguema, E. ; Mounaix, P. ; Teppe, F. ; Knap, W. ; Otsuji, T.
Author_Institution
CPMOH, Univ. Bordeaux 1, Talence
fYear
2008
fDate
15-19 Sept. 2008
Firstpage
1
Lastpage
2
Abstract
We demonstrated a room-temperature detection of terahertz radiation with a plasma wave nanometric transistor. The detection is resonant and can be efficient for terahertz time-resolved imaging.
Keywords
III-V semiconductors; gallium arsenide; high electron mobility transistors; nanoelectronics; plasma devices; plasma waves; submillimetre wave imaging; terahertz spectroscopy; terahertz wave detectors; GaAs; HEMT; THz time domain spectrometer; plasma wave nanometric transistor; room temperature terahertz imaging; temperature 293 K to 298 K; terahertz radiation detection; terahertz time-resolved imaging; HEMTs; Optical imaging; Optical pulses; Plasma temperature; Plasma waves; Radiation detectors; Resonance; Spectroscopy; Ultrafast optics; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Infrared, Millimeter and Terahertz Waves, 2008. IRMMW-THz 2008. 33rd International Conference on
Conference_Location
Pasadena, CA
Print_ISBN
978-1-4244-2119-0
Electronic_ISBN
978-1-4244-2120-6
Type
conf
DOI
10.1109/ICIMW.2008.4665764
Filename
4665764
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