Effect of base heavy doping on thermal characteristic of SiGe HBT

Author

Qiang, Fu ; Zhang Wan-Rong ; Jin Dong-Yue ; Hong-Yun, Xie ; Xin, Zhao ; Ren-Qing, Wang

Author_Institution

Coll. of Electron. Inf. & Control Eng., Beijing Univ. of Technol. Beijing, Beijing, China

fYear

2011

fDate

15-17 April 2011

Firstpage

1365

Lastpage

1367

Abstract

Based on the electro-thermal feedback model for multi-finger power SiGe heterojunction bipolar transistor (SiGe HBT), this article analyzes the effect of base heavy doping on thermal characteristic of SiGe HBT. Because of the effect of base heavy doping, SiGe HBT will produce bandgap narrowing which decreases the collector current density and affects the device thermal distribution. By analyzing the thermal characteristic of multi-finger spacing SiGe HBT, we find that increasing base doping can decrease the current density and the temperature of emitter finger, which suppress the emitter finger thermoelectric positive feedback and improve the device thermal stability.

Keywords

current density; energy gap; heterojunction bipolar transistors; power bipolar transistors; semiconductor doping; temperature distribution; thermal stability; thermoelectricity; SiGe; bandgap narrowing; base heavy doping; collector current density; device thermal distribution; device thermal stability; electro-thermal feedback model; emitter finger thermoelectric positive feedback; multifinger power heterojunction bipolar transistor; multifinger spacing HBT; thermal characteristic; Current density; Doping; Fingers; Heterojunction bipolar transistors; Photonic band gap; Silicon germanium; Thermal stability; Base doping; SiGe HBT; Thermal Characteristic;

fLanguage

English

Publisher

ieee

Conference_Titel

Electric Information and Control Engineering (ICEICE), 2011 International Conference on

Conference_Location

Wuhan

Print_ISBN

978-1-4244-8036-4

Type

conf

DOI

10.1109/ICEICE.2011.5777650

Filename

5777650