Modified ISFETs having an extended gate on the thick dielectric

Author

Ahn, Chang-Geun ; Park, ChanWoo ; Kim, Ansoon ; Yang, Jong-Heon ; Ah, ChilSeong ; Kim, Taeyoub ; Jang, Moongyu ; Sung, GunYong

Author_Institution

Biosensor Res. Team, Electron. & Telecommun. Res. Inst. (ETRI), Daejeon, South Korea

fYear

2009

fDate

25-28 Oct. 2009

Firstpage

371

Lastpage

374

Abstract

Modified ISFETs having an extended gate on the thick dielectric has been developed to obtain the extremely high sensitivity. The capacitance of the extended gate is controlled to be very small via the thickness of the insulator layer so that it may be ignored when compared with the gate capacitance of the transistor. As the result, the gate voltage may be fully dependent on the surface charge of the extended gate. The surface immobilization of the monoclonal antibody of microalbumin (mab-MA) on the extended gate is confirmed by the specific binding test of modified Au nanoparticles (NPs), resulting in a high density Au nanoparticles of about 800 NPs/um². When the microalbumin protein of 1 ng/ml on the mab-MA surface of the extended gate is injected, the extremely high sensitivity of 1800% is observed.

Keywords

biosensors; capacitance; ion sensitive field effect transistors; proteins; Au; biosensors; extended gate capacitance; gate voltage; insulator layer thickness; ion-sensitive field effect transistor; mab-MA; microalbumin protein; modified ISFET; nanoparticles; specific binding test; surface charge; thick dielectric; Biosensors; Capacitance; Chemical sensors; Dielectrics; Ethanol; FETs; Glass; Gold; Surface cleaning; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Sensors, 2009 IEEE

Conference_Location

Christchurch

ISSN

1930-0395

Print_ISBN

978-1-4244-4548-6

Electronic_ISBN

1930-0395

Type

conf

DOI

10.1109/ICSENS.2009.5398239

Filename

5398239