Effect of parasitic resistance on a MEMS vibratory gyroscopes due to temperature fluctuations

Author

Hou, Zhanqiang ; Xiao, Dingbang ; Wu, Xuezhong ; Dong, Peitao ; Niu, Zhengyi ; Zhou, Zelong ; Zhang, Xu

Author_Institution

Coll. of Mechatron. Eng. & Autom., Nat. Univ. of Defense Technol., Changsha, China

fYear

2011

fDate

20-23 Feb. 2011

Firstpage

293

Lastpage

296

Abstract

Parasitic resistance is one of the most prevalent error sources preventing the performance of MEMS vibratory gyroscopes. This paper reports the effect of parasitic resistance on the performance of a MEMS vibratory gyroscope which is suspended with a slanted cantilever. The parasitic resistance and capacitance of the micromachined gyroscope were analyzed. The electrical model of the overall system was built. The transfer function of the gyroscope was derived as a parallel connection of a mass-spring-damper model and a R-C network made of parasitic resistance and capacitance. The parasitic resistance affects on the performance of the frequency response was simulated. The temperature characteristic of the frequency response was tested, which is in accordance with the simulated results. The gain of the frequency response changed about 20% in dBs over the range of 30°C to 60°C.

Keywords

cantilevers; gyroscopes; micromachining; microsensors; MEMS vibratory gyroscopes; R-C network; error sources; micromachined gyroscope; parasitic resistance; slanted cantilever; temperature 30 degC to 60 degC; temperature fluctuations; Capacitance; Frequency response; Gyroscopes; Micromechanical devices; Resistance; Temperature; Temperature sensors; MEMS vibratory gyroscope; frequency response; parasitic capacitance; parasitic resistance; temperature characteristic;

fLanguage

English

Publisher

ieee

Conference_Titel

Nano/Micro Engineered and Molecular Systems (NEMS), 2011 IEEE International Conference on

Conference_Location

Kaohsiung

Print_ISBN

978-1-61284-775-7

Type

conf

DOI

10.1109/NEMS.2011.6017351

Filename

6017351