• DocumentCode
    3281275
  • Title

    Plasma wave terahertz electronics

  • Author

    Shur, Michael

  • Author_Institution
    ECSE, Rensselaer Polytech. Inst., Troy, NY
  • fYear
    2008
  • fDate
    15-19 Sept. 2008
  • Firstpage
    1
  • Lastpage
    3
  • Abstract
    The frequencies of plasma waves (i.e. waves of electron density) in short channel field effect transistors (FETs) lie in terahertz (THz) range. Excitation, instability, and rectification of plasma waves enable a new generation of THz electronics promising to bridge the famous terahertz gap.
  • Keywords
    millimetre wave field effect transistors; plasma density; plasma instability; plasma waves; rectification; terahertz wave generation; electron density; plasma instability; plasma wave terahertz electronics; plasma waves frequency; rectification; short channel field effect transistors; terahertz gap; CMOS technology; Electron mobility; FETs; Frequency; Gallium nitride; Physics; Plasma temperature; Plasma waves; Radiation detectors; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Infrared, Millimeter and Terahertz Waves, 2008. IRMMW-THz 2008. 33rd International Conference on
  • Conference_Location
    Pasadena, CA
  • Print_ISBN
    978-1-4244-2119-0
  • Electronic_ISBN
    978-1-4244-2120-6
  • Type

    conf

  • DOI
    10.1109/ICIMW.2008.4665864
  • Filename
    4665864
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3281275