Effect of InGaAs surface states and interfaces on the photo-generated THz pulse shape

Author

Tissafi, B. ; Grimault, A.S. ; Aniel, F.

Author_Institution

Inst. d´´Electron. Fondamentale, Orsay, Paris

fYear

2008

fDate

15-19 Sept. 2008

Firstpage

1

Lastpage

2

Abstract

We present some 3D modeling of the physical behavior of a 1.55 mum photoconductive switch (PCS). The first one compares PCS with Ohmic contact versus devices with Schottky contact. The results are very close. The second study stress on the incidence of the Fermi-level pinning at the surface of the InGaAs layer on the amplitude of the THz pulse. Also, we present the results of an interdigited photoconductive switch (IPS) modeling.

Keywords

Fermi level; III-V semiconductors; Schottky barriers; gallium arsenide; indium compounds; ohmic contacts; photoconducting switches; submillimetre wave generation; surface states; Fermi-level pinning; InGaAs; InGaAs interfaces; InGaAs surface states; Schottky contact effect; interdigited photoconductive switch modeling; ohmic contact; photoconductive switch; photogenerated terahertz pulse; terahertz pulse shape; wavelength 1.55 mum; Indium gallium arsenide; Ohmic contacts; Personal communication networks; Photoconductivity; Pulse generation; Pulse shaping methods; Schottky barriers; Shape; Strips; Switches;

fLanguage

English

Publisher

ieee

Conference_Titel

Infrared, Millimeter and Terahertz Waves, 2008. IRMMW-THz 2008. 33rd International Conference on

Conference_Location

Pasadena, CA

Print_ISBN

978-1-4244-2119-0

Electronic_ISBN

978-1-4244-2120-6

Type

conf

DOI

10.1109/ICIMW.2008.4665868

Filename

4665868