DocumentCode
328153
Title
Ultrafast GaInAs/AlInAs/InP photoreceiver based on waveguide architecture
Author
Bach, H.-G. ; Umbach, A. ; Unterborsch, G. ; Passenberg, W. ; Mekonnen, G.G. ; Schlaak, W. ; Schramm, C. ; Ebert, W. ; Wolfram, P. ; Van Waasen, S. ; Bertenburg, R.M. ; Janssen, G. ; Reuter, R. ; Auer, U. ; Tegude, F.J.
Author_Institution
Heinrich-Hertz-Inst. fur Nachrichtentech. Berlin GmbH, Germany
Volume
1
fYear
1996
fDate
19-19 Sept. 1996
Firstpage
133
Abstract
An InP-based photoreceiver OEIC with a bandwidth of 27 GHz is reported. The device consists of a pin-photodiode with integrated optical waveguide and a coplanar travelling wave amplifier being composed of four HEMTs.
Keywords
HEMT integrated circuits; III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; integrated optics; integrated optoelectronics; optical receivers; optical waveguides; p-i-n photodiodes; time division multiplexing; 27 GHz; GaInAs-AlInAs-InP; HEMT ICs; InP; InP-based photoreceiver OEIC; bandwidth; coplanar travelling wave amplifier; integrated optical waveguide; pin-photodiode; ultrafast GaInAs/AlInAs/InP photoreceiver; waveguide architecture;
fLanguage
English
Publisher
ieee
Conference_Titel
Optical Communication, 1996. ECOC '96. 22nd European Conference on
Conference_Location
Oslo, Norway
Print_ISBN
82-423-0418-1
Type
conf
Filename
713757
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