• DocumentCode
    3281641
  • Title

    High dynamic range, high output power I/Q modulator in 50 GHz ft SiGe technology

  • Author

    Karthaus, U. ; Alomari, N. ; Bergmann, G. ; Schuhmacher, H.

  • Author_Institution
    Atmel, Heilbronn, Germany
  • fYear
    2004
  • fDate
    6-8 June 2004
  • Firstpage
    539
  • Lastpage
    542
  • Abstract
    This paper presents the design and measurement results of a high dynamic range quadrature modulator integrated in Atmel´s 50 GHz f1 SiGe foundry technology. An integrated differential cascode output amplifier boosts the output compression point to >14.3 dBm (3.5 Vpp diff. input referred) without sacrificing dynamic range. A three-stage polyphase filter provides high image rejection from 700 MHz to 2700 MHz.
  • Keywords
    Ge-Si alloys; UHF amplifiers; UHF filters; bipolar MMIC; modulators; semiconductor materials; 50 GHz; 700 to 2700 MHz; SiGe; UHF modulation; differential cascode output amplifier; high dynamic range modulator; high output power I/Q modulator; image rejection; microwave bipolar integrated circuits; multiple-stage polyphase filter; output compression point; quadrature modulator; 3G mobile communication; Dynamic range; Filters; Foundries; Germanium silicon alloys; Linearity; Multiaccess communication; Power generation; Radiofrequency amplifiers; Silicon germanium;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Radio Frequency Integrated Circuits (RFIC) Symposium, 2004. Digest of Papers. 2004 IEEE
  • ISSN
    1529-2517
  • Print_ISBN
    0-7803-8333-8
  • Type

    conf

  • DOI
    10.1109/RFIC.2004.1320677
  • Filename
    1320677