High dynamic range SiGe downconverter with power efficient 50 Ω IF output buffer

Author

Karthaus, U.

Author_Institution

Atmel, Heilbronn, Germany

fYear

2004

fDate

6-8 June 2004

Firstpage

551

Lastpage

554

Abstract

This paper presents the design and measurement results of a high dynamic range down conversion mixer intended for use e.g. in W-CDMA. basestations. The mixer has been realized in Atmel´s 50 GHz f_t=f_max foundry SiGe technology. Power matching resistors at all three ports provide excellent broadband power match without need for external matching networks. Measured key performance parameters are a single sideband noise figure (SSB NF) of 12.9 dB, an output referred third order intercept point (OIP₃) of +30.1 dBm and an output referred compression point (P_-1dB) of +17.1 dBm.

Keywords

Ge-Si alloys; UHF frequency convertors; UHF integrated circuits; UHF mixers; bipolar analogue integrated circuits; buffer circuits; impedance matching; semiconductor materials; 12.9 dB; 50 GHz; 50 ohm; SiGe; UHF frequency conversion; W-CDMA basestations; analog integrated circuits; broadband power matching; down conversion mixer; high dynamic range downconverter; microwave bipolar integrated circuits; port power matching resistors; power efficient IF output buffer; Amplitude modulation; Dynamic range; Foundries; Germanium silicon alloys; Multiaccess communication; Noise figure; Noise measurement; Radio frequency; Resistors; Silicon germanium;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio Frequency Integrated Circuits (RFIC) Symposium, 2004. Digest of Papers. 2004 IEEE

ISSN

1529-2517

Print_ISBN

0-7803-8333-8

Type

conf

DOI

10.1109/RFIC.2004.1320680

Filename

1320680