MSM Diamond UV detector

Author

Cheirsirikul, S. ; Jesen, S. ; Hruanun, C.

Author_Institution

Fac. of Eng., King Mongkut´´s Inst. of Technol. Ladkrabang, Bangkok, Thailand

fYear

2011

fDate

20-23 Feb. 2011

Firstpage

414

Lastpage

416

Abstract

Development Synthesizing Diamond film on (100) silicon substrate was processed by HFCVD (Hot Filament Chemical Vapor Deposition). The processes consisted of using methane (CH4) to produce intrinsic diamond and then constructing MSM device on the diaphragm of diamond film. Schotthy junctions on the top and the lower of the diaphragm were produced by aluminum which caused the carriers were able to move in the vertical direction to reduce the effect of grain boundaries. Then, the spectral response was investigated for the light wavelength in the range of 190 nm to 800 nm. The results showed that the device had good response to UV light and very low response to visible light. After that the device was sintered at 450°C in different times in order to find the decreased leakage current and proper response time.

Keywords

chemical vapour deposition; diamond; metal-semiconductor-metal structures; organic compounds; ultraviolet detectors; HFCVD; MSM device construction; MSM diamond UV detector; Schotthy junction; Si; aluminum; development synthesizing diamond film; diamond film diaphragm; grain boundary effect reduction; hot filament chemical vapor deposition; intrinsic diamond production; metal-semiconductor-metal diamond UV detector; methane; temperature 450 degC; wavelength 190 nm to 800 nm; Detectors; Diamond-like carbon; Films; Leakage current; Silicon; Time factors; UV detector; formatting; insert (key words) MSM Diamond fabrication; style; styling;

fLanguage

English

Publisher

ieee

Conference_Titel

Nano/Micro Engineered and Molecular Systems (NEMS), 2011 IEEE International Conference on

Conference_Location

Kaohsiung

Print_ISBN

978-1-61284-775-7

Type

conf

DOI

10.1109/NEMS.2011.6017380

Filename

6017380