A SiGe differential active filter using a Sallen and Key cell

Author

Temcamani, Farid ; Diab, Hilal ; Régis, Myrianne ; Gautier, Jean-Luc

Author_Institution

ENSEA-ECIME, Cergy Pontoise, France

fYear

2004

fDate

6-8 June 2004

Firstpage

651

Lastpage

654

Abstract

In this paper, a 1.3 GHz band pass filter, based on a Sallen and Key cell, is presented. A new amplifier topology of the S-K cell is proposed, with input and output differential amplifiers optimized to have high performances in terms of CMMR, IP3 and noise figure. All the filter stages were realized with a SiGe BiCMOS technology. Comparison showed a good agreement between simulation and measurements. In particular, the S-K amplifier gain and the filter selectivity can be tuned. Q factors of up to 60 were measured. The measured even-mode rejection is close to 30 dB at the center frequency.

Keywords

BiCMOS analogue integrated circuits; Ge-Si alloys; Q-factor; UHF filters; UHF integrated circuits; active filters; band-pass filters; circuit optimisation; circuit tuning; differential amplifiers; semiconductor materials; 1.3 GHz; BiCMOS technology; CMMR; IP3; Q factor; S-K amplifier gain tuning; Sallen and Key cell; SiGe; amplifier topology optimization; band pass filter; differential active filter; even-mode rejection; filter selectivity tuning; input/output differential amplifiers; noise figure; Active filters; Band pass filters; BiCMOS integrated circuits; Differential amplifiers; Germanium silicon alloys; Noise figure; Q factor; Q measurement; Silicon germanium; Topology;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio Frequency Integrated Circuits (RFIC) Symposium, 2004. Digest of Papers. 2004 IEEE

ISSN

1529-2517

Print_ISBN

0-7803-8333-8

Type

conf

DOI

10.1109/RFIC.2004.1320705

Filename

1320705