• DocumentCode
    3282729
  • Title

    Surface uniform wet etching of ZnO films and influence of oxygen annealing on etching properties

  • Author

    Zhang, Tao ; Sun, Lei ; Han, Dedong ; Wang, Yi ; Han, Ruqi

  • Author_Institution
    Inst. of Microelectron., Peking Univ., Beijing, China
  • fYear
    2011
  • fDate
    20-23 Feb. 2011
  • Firstpage
    626
  • Lastpage
    629
  • Abstract
    Wet etchings of ZnO films with HCl, H3PO4 and NH4Cl as etchants were systematically studied. The etching morphology and etching rate were focused on and reported in details. The investigation shows that the NH4Cl aqueous solution can provide uniform etching rate in the entire regions exposed to the etchant, and the etching rate always changes linearly with NH4Cl solution concentrations in a wide range. The etching rate will be stable if a constant concentration is applied. We also took the influence of different annealing conditions on etching properties into accounts. Under a certain annealing condition, the NH4Cl aqueous solution still provides uniform etching properties and controllable etching rates. These properties of NH4Cl aqueous solution as etchant will bring wide design window to real applications. The above results indicate NH4Cl is a promising etchant for ZnO wet etching.
  • Keywords
    II-VI semiconductors; annealing; etching; semiconductor thin films; wide band gap semiconductors; ZnO; annealing; aqueous solution; design window; etching morphology; etching rate; surface uniform wet etching; thin films; Annealing; Films; Silicon; Wet etching; Zinc oxide; NH4Cl solution; ZnO thin film; annealing; etching morphology; etching rate; wet etching;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nano/Micro Engineered and Molecular Systems (NEMS), 2011 IEEE International Conference on
  • Conference_Location
    Kaohsiung
  • Print_ISBN
    978-1-61284-775-7
  • Type

    conf

  • DOI
    10.1109/NEMS.2011.6017433
  • Filename
    6017433