One-Dimensional Sub-Threshold Model for Symmetric Double-Gate MOSFETs

Author

Qureshi, S. ; Chhabra, Gaurav

Author_Institution

Dept. of Electr. Eng., Indian Inst. of Technol., Kanpur

fYear

2005

fDate

7-9 Dec. 2005

Firstpage

95

Lastpage

96

Abstract

A one-dimensional (1-D) surface potential based sub-threshold model for symmetric double-gate MOSFET (DG MOSFET) is proposed. The model provides useful insight into the device behaviour. The proposed model shows good agreement with the two-dimensional (2-D) numerical simulation results for sub-threshold current, sub-threshold swing, threshold voltage roll-off and drain induced barrier lowering. The model is able to predict the behavior of the device as the oxide thickness is scaled. In this paper we have modeled the sub-threshold behavior of symmetric DG MOSFET by applying Gauss´s law. The model is restricted to sub-threshold region for symmetric DG MOSFET. Mid-gap gates (Taur, 2000) are considered and mobile charge carriers are neglected

Keywords

MOSFET; semiconductor device models; 1D surface potential; Gauss law; double-gate MOSFET; mobile charge carriers; oxide thickness; Boundary conditions; Charge carriers; Differential equations; Gaussian processes; MOSFETs; Numerical simulation; Predictive models; Surface fitting; Threshold voltage; Two dimensional displays;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Device Research Symposium, 2005 International

Conference_Location

Bethesda, MD

Print_ISBN

1-4244-0083-X

Type

conf

DOI

10.1109/ISDRS.2005.1595995

Filename

1595995