Design and Simulation of a Ku-band MMIC Power Amplifier

Author

Chen Li ; Zheng-Liang Huang ; Wei Chen ; Yong-Heng Shang ; Fa-Xin Yu

Author_Institution

Sch. of Aeronaut. & Astronaut., Zhejiang Univ., Hangzhou, China

fYear

2012

fDate

25-28 Aug. 2012

Firstpage

421

Lastpage

424

Abstract

A compact 6 W AlGaAs/InGaAs/GaAs monolithic microwave integrated circuit (MMIC) high power amplifier (HPA) is proposed for Ku-band applications. This three-stage amplifier with layout size of 14.35 mm2 (4.39 mm×3.27 mm) is designed to fully match 50 O input and output impedance. with 8 V and 3300 mA DC bias condition, the MMIC delivers 30.4 dB small-signal gain, 37.8 dBm saturated output power with 23.4 % power added efficiency from 12 to 15 GHz. the 38.5 dBm of maximum output power with 27 % of peak power added efficiency at 13.3 GHz can be achieved. the amplifier circuit is fabricated in 0.25 μm pseudomorphic high electronic mobility transistor (pHEMT) technology.

Keywords

MMIC power amplifiers; high electron mobility transistors; DC bias condition; Ku-band MMIC power amplifier; Ku-band application; MMIC high power amplifier; amplifier circuit; current 3300 mA; frequency 12 GHz to 15 GHz; input impedance; monolithic microwave integrated circuit; output impedance; power 6 W; pseudomorphic high electronic mobility transistor technology; size 0.25 mum; three-stage amplifier; voltage 8 V; Gain; Gallium arsenide; MMICs; PHEMTs; Power amplifiers; Power generation; Ku-band; Monolithic microwave integrated circuit; power amplifier; pseudomorphic high electronic mobility transistor;

fLanguage

English

Publisher

ieee

Conference_Titel

Genetic and Evolutionary Computing (ICGEC), 2012 Sixth International Conference on

Conference_Location

Kitakushu

Print_ISBN

978-1-4673-2138-9

Type

conf

DOI

10.1109/ICGEC.2012.76

Filename

6457286