N-type Thin-film Transistors Fabricated on Transferred, Elastically Strain-Shared Si/SiGe/Si Membranes

Author

Yuan, Hao-Chih ; Roberts, Michelle M. ; Savage, Donald E. ; Lagally, Max G. ; Ma, Zhenqiang

fYear

2005

fDate

7-9 Dec. 2005

Firstpage

207

Lastpage

208

Abstract

Strained silicon is known for both electron and hole mobility enhancement as stated in J. L. Hoyt et al. (2002) and C. W. Leitz et al. (2002). However, the dislocations could be detrimental to the device performance without carefully engineering the relaxation according to K. Ismail et al. (1994). To overcome these limitations, compliant substrate and Si/SiGe/Si sandwich structure that utilized elastic strain-sharing have been proposed according to Y. H. Luo et al. (2001) and G. M. Cohen et al. (2005). In this paper, we report N-type thin-film transistors (TFTs) fabricated on these dislocation-free, stain sharing Si/SiGe/Si membranes

Keywords

Ge-Si alloys; dislocations; electron mobility; elemental semiconductors; hole mobility; silicon; thin film transistors; Si-SiGe-Si; dislocation-free membrane; elastically strain-shared membrane; electron mobility enhancement; hole mobility enhancement; sandwich structure; strained silicon; thin-film transistors; Biomembranes; Capacitive sensors; Electron mobility; Germanium silicon alloys; Rough surfaces; Silicon germanium; Substrates; Surface roughness; Thin film transistors; X-ray scattering;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Device Research Symposium, 2005 International

Conference_Location

Bethesda, MD

Print_ISBN

1-4244-0083-X

Type

conf

DOI

10.1109/ISDRS.2005.1596055

Filename

1596055