• DocumentCode
    3283956
  • Title

    Highly Reliable High-k Gate Dielectrics with Gradual Hf-profile in the HfO2/SiO2 Interface Region

  • Author

    Iwamoto, K. ; Mizubayashi, W. ; Ogawa, A. ; Nabatame, T. ; Satake, H. ; Toriumi, A.

  • fYear
    2005
  • fDate
    Dec. 7-9, 2005
  • Firstpage
    211
  • Lastpage
    212
  • Keywords
    Annealing; Atomic layer deposition; Circuits; Degradation; Hafnium oxide; High K dielectric materials; High-K gate dielectrics; MOSFETs; Semiconductor films; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Device Research Symposium, 2005 International
  • Print_ISBN
    1-4244-0083-X
  • Type

    conf

  • DOI
    10.1109/ISDRS.2005.1596057
  • Filename
    1596057
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3283956