DocumentCode
3283969
Title
Trapping in Deep Defects under Substrate Hot Electron Stress in TiN/Hf-silicate Based Gate Stacks
Author
Chowdhury, N.A. ; Srinivasan, P. ; Misra, D.
fYear
2005
fDate
Dec. 7-9, 2005
Firstpage
213
Lastpage
214
Keywords
Capacitance-voltage characteristics; Dielectrics; Electron traps; Energy states; MOCVD; Photonic band gap; Reliability engineering; Stress; Temperature; Tin;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Device Research Symposium, 2005 International
Print_ISBN
1-4244-0083-X
Type
conf
DOI
10.1109/ISDRS.2005.1596058
Filename
1596058
Link To Document