DocumentCode
3283989
Title
Gate-dielectric interface effects on low-frequency (1/f) noise in p-MOSFETs with high-K dielectrics
Author
Srinivasan, P. ; Simoen, E. ; Singanamalla, R. ; Yu, H.Y. ; Claeys, C. ; Misra, D.
fYear
2005
fDate
Dec. 7-9, 2005
Firstpage
215
Lastpage
216
Keywords
CMOS technology; Dielectric materials; Electrodes; Frequency; Hafnium; High K dielectric materials; High-K gate dielectrics; Inorganic materials; Low-frequency noise; MOSFET circuits;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Device Research Symposium, 2005 International
Print_ISBN
1-4244-0083-X
Type
conf
DOI
10.1109/ISDRS.2005.1596059
Filename
1596059
Link To Document