• DocumentCode
    3284160
  • Title

    Interface Characterization of Molecular-Monolayer/SiO/sub 2/ Based Molecular Junctions

  • Author

    Richter, C.A. ; Hacker, C.A. ; Richter, L.J. ; Kirillov, O.A. ; Vogel, E.M.

  • Author_Institution
    Semicond. Electron. Div., National Inst. of Stand. & Technol., Gaithersburg, MD
  • fYear
    2005
  • fDate
    7-9 Dec. 2005
  • Firstpage
    234
  • Lastpage
    235
  • Abstract
    The properties of monolayers of molecules on thin SiO2 are of great interest for future hybrid Si-molecular device technologies. We present here a correlation of the results of dc-current-voltage (IV) and capacitance-voltage (CV) measurements with vibrational spectroscopy of metal/monolayer/SiO2/Si structures to establish an improved understanding of the interactions at the buried metal/monolayer and dielectric/silicon interfaces
  • Keywords
    electric properties; interface states; molecular electronics; monolayers; silicon compounds; SiO2; buried metal-monolayer interface; capacitance-voltage measurements; dc-current-voltage measurement; dielectric-silicon interface; interface characterization; molecular junctions; molecular monolayer; vibrational spectroscopy; Capacitance measurement; Capacitors; Computer hacking; Dielectric measurements; Dielectric thin films; Gold; NIST; Silicon; Vibration measurement; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Device Research Symposium, 2005 International
  • Conference_Location
    Bethesda, MD
  • Print_ISBN
    1-4244-0083-X
  • Type

    conf

  • DOI
    10.1109/ISDRS.2005.1596070
  • Filename
    1596070
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3284160