DocumentCode
328420
Title
Electron electron interaction and classical mesoscopic phenomena in semiconductors
Author
Luryi, Serge
Author_Institution
State Univ. of New York, Stony Brook, NY, USA
fYear
1998
fDate
12-13 Mar 1998
Firstpage
23
Lastpage
33
Abstract
I discuss the effect of electron-electron interaction on classical mesoscopic phenomena in semiconductor devices, as manifested by the well-known phonon conductivity oscillations in tunnel junctions. The central idea is the realization that the temperature dependence of the oscillation amplitude contains a direct and unambiguous information about the rate of electron-electron scattering in the material studied. Quantitative theory to be developed and device modeling based on this theory should enable a unique characterization of electron-electron interaction, extracting parameters relevant to the operation of important semiconductor devices
Keywords
mesoscopic systems; semiconductor device models; classical mesoscopic phenomena; electron electron interaction; electron-electron scattering; parameter extraction; phonon conductivity oscillation; semiconductor device model; tunnel junction; Charge carrier processes; Conducting materials; Conductivity; Data mining; Electrons; Phonons; Scattering; Semiconductor devices; Semiconductor materials; Temperature dependence;
fLanguage
English
Publisher
ieee
Conference_Titel
Physics and Modeling of Devices Based on Low-Dimensional Structures, 1998. Proceedings., Second International Workshop on
Conference_Location
Aizu-Wakamatsu
Print_ISBN
0-8186-8682-0
Type
conf
DOI
10.1109/LDS.1998.714528
Filename
714528
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