Ultra wideband CMOS low noise amplifier with active input matching

Author

Vishwakarma, Sumit ; Jung, Sungyong ; Joo, Youngjoong

Author_Institution

Dept. of Electr. Eng., Arizona State Univ., Tempe, AZ, USA

fYear

2004

fDate

18-21 May 2004

Firstpage

415

Lastpage

419

Abstract

A new low noise amplifier (LNA) with broadband input matching and excellent gain flatness operating at the frequency range of 3.1-4.8 GHz is designed using a 0.18 μm CMOS process. Wideband input matching using common-gate at the input stage is proposed. From a supply voltage of 1.8 V, the two-stage LNA exhibits a noise figure (NF) of 3.95-4.3 dB within the required bandwidth. The LNA has S11 less than -15 dB over the entire 3.1-4.8 GHz band. A reversed isolation (S12) less than -43 dB was achieved. A power gain (S21) of 16.5 dB with only 0.6 dB variations was obtained within the 3.1-4.8 GHz band. Input IP3 and 1 dB compression points are not of much concern in the case of the UWB LNA, since transmit power is restricted to be less than -42 dBm/Hz.

Keywords

CMOS analogue integrated circuits; MMIC amplifiers; impedance matching; integrated circuit design; radiofrequency amplifiers; wideband amplifiers; 0.18 micron; 16.5 dB; 3.1 to 4.8 GHz; 3.95 to 4.3 dB; CMOS low noise amplifier; CMOS process; UWB LNA; active input matching; broadband input matching; gain flatness; impedance matching; noise figure; reversed isolation; two-stage amplifier; ultra wideband low noise amplifier; Active noise reduction; Broadband amplifiers; CMOS process; Frequency; Impedance matching; Low-noise amplifiers; Noise figure; Noise measurement; Ultra wideband technology; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Ultra Wideband Systems, 2004. Joint with Conference on Ultrawideband Systems and Technologies. Joint UWBST & IWUWBS. 2004 International Workshop on

Print_ISBN

0-7803-8373-7

Type

conf

DOI

10.1109/UWBST.2004.1321007

Filename

1321007