Photonic band gap structures and their application for measuring parameters of semiconductor layers

Author

Usanov, D.A. ; Nikitov, S.A. ; Skripal, A.V. ; Ponomarev, D.V. ; Latysheva, E.V.

Author_Institution

Dept. Solid State Phys., Saratov State Univ. named after N.G., Saratov, Russia

fYear

2015

fDate

17-22 May 2015

Firstpage

1

Lastpage

4

Abstract

The possibility to simultaneously determine the thickness and the conductivity of thin semiconductor layer and the mobility of its free charge carriers by use of microwave photonic crystal with small number of its constituent elements has been shown. The results of the determination of semiconductor epitaxial layer parameters by the inverse problem solving using reflection and transmission spectra in microwave band are presented.

Keywords

carrier mobility; electrical conductivity; inverse problems; microwave spectra; photonic band gap; photonic crystals; reflectivity; semiconductor epitaxial layers; conductivity; constituent elements; free charge carrier mobility; inverse problem; microwave band; microwave photonic crystal; photonic band gap structures; reflection spectra; semiconductor epitaxial layer parameters; thin semiconductor layer; transmission spectra; Crystals; Dielectrics; Epitaxial growth; Gallium; Indexes; Photonics; Single photon emission computed tomography; Microwave photonic crystals; conductivity; inverse problem; mobility; semiconductor layers; thickness; waveguides;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium (IMS), 2015 IEEE MTT-S International

Conference_Location

Phoenix, AZ

Type

conf

DOI

10.1109/MWSYM.2015.7166794

Filename

7166794