• DocumentCode
    3284547
  • Title

    High Breakdown Voltage AlGaN/GaN MIS-HEMT with SiN and TiO2 Gate Insulator

  • Author

    Yagi, Shuich ; Shimizu, Mitsuaki ; Inada, Masaki ; Yamamoto, Yuki ; Piao, Guanxi ; Yano, Yoshiki ; Okumura, Hajime

  • fYear
    2005
  • fDate
    Dec. 7-9, 2005
  • Firstpage
    280
  • Lastpage
    281
  • Keywords
    Aluminum gallium nitride; Dielectrics and electrical insulation; Electron beams; FETs; Gallium nitride; HEMTs; MODFETs; Metal-insulator structures; Silicon compounds; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Device Research Symposium, 2005 International
  • Print_ISBN
    1-4244-0083-X
  • Type

    conf

  • DOI
    10.1109/ISDRS.2005.1596094
  • Filename
    1596094
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3284547