DocumentCode
3284612
Title
Parameter Extraction and SPICE Model Development for 4H-Silicon Carbide (SiC) Power MOSFET
Author
Hasanuzzaman, Md ; Islam, Syed K. ; Alam, Mohmmad T.
fYear
2005
fDate
Dec. 7-9, 2005
Firstpage
292
Lastpage
293
Keywords
Capacitance; Circuit testing; Electrical resistance measurement; MOSFET circuits; Parameter extraction; Power MOSFET; Power system modeling; SPICE; Silicon carbide; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Device Research Symposium, 2005 International
Print_ISBN
1-4244-0083-X
Type
conf
DOI
10.1109/ISDRS.2005.1596100
Filename
1596100
Link To Document