DocumentCode
3285028
Title
Two-Dimensional Quantum Mechanical Modeling for Multiple-Channel FinFET
Author
Kim, Joong-sik ; Won, Taeyoung
Author_Institution
Dept. of Electr. Eng., Nat. IT Res. Center for Computational Electron., Incheon
fYear
2005
fDate
7-9 Dec. 2005
Firstpage
344
Lastpage
345
Abstract
In this paper, we report our preliminary study on the 2D quantum-mechanical modeling of multiple-channel FET through solving the coupled Poisson-Schrodinger equations for a multiple-channel FET structure in a self-consistent manner. Our simulation revealed that the drain current driving capability as well as the transconductance for multiple-channel FETs was tremendously improved when compared to FinFETs. The simulation results also revealed that the short-channel effects are more effectively suppressed with comparison to the conventional FinFETs
Keywords
MOSFET; Poisson equation; Schrodinger equation; semiconductor device models; 2D quantum mechanical modeling; Poisson-Schrodinger equations; drain current driving capability; multiple-channel FinFET; short-channel effects; CMOS process; FETs; FinFETs; Immune system; Nanostructures; Poisson equations; Quantum computing; Quantum mechanics; Schrodinger equation; Transconductance;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Device Research Symposium, 2005 International
Conference_Location
Bethesda, MD
Print_ISBN
1-4244-0083-X
Type
conf
DOI
10.1109/ISDRS.2005.1596127
Filename
1596127
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