DocumentCode
3285055
Title
On the Accuracy of Analytical Model for Room-Temperature Operating Silicon Single-Electron Transistors with Discrete Quantum Energy Levels
Author
Miyaji, Kousuke ; Kobayashi, Masaharu ; Ohtou, Tetsu ; Saitoh, Masumi ; Hiramoto, Toshiro
Author_Institution
Inst. of Ind. Sci., Tokyo Univ.
fYear
2005
fDate
7-9 Dec. 2005
Firstpage
348
Lastpage
349
Abstract
In this paper, we compare our model to conventional master equation method as stated in M. Saitoh et al. (2004) and C. W. J. Beenaker (1991) and discuss the accuracy of our model more quantitatively. The proposed compact analytical SET model with discrete quantum energy levels is verified by the conventional master equation method. Our model provides sufficient accuracy in RT operating applications without using any numerical solutions. It is suitable for large-scale circuit simulations utilizing NDC of RT operating SETs
Keywords
semiconductor device models; silicon; single electron transistors; analytical model; discrete quantum energy levels; large-scale circuit simulations; master equation; room-temperature operation; silicon single-electron transistors; Analytical models; Circuit simulation; Energy states; Equations; Quantum dots; Silicon; Single electron transistors; Stationary state; Temperature; Tunneling;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Device Research Symposium, 2005 International
Conference_Location
Bethesda, MD
Print_ISBN
1-4244-0083-X
Type
conf
DOI
10.1109/ISDRS.2005.1596129
Filename
1596129
Link To Document