A planar 75% efficient GaN 1.2-GHz DC-DC converter with self-synchronous rectifier

Author

Ramos, Ignacio ; Ruiz, Maria N. ; Garcia, Jose A. ; Maksimovic, Dragan ; Popovic, Zoya

Author_Institution

Dept. of Electr., Comput. & Energy Eng., Univ. of Colorado, Boulder, CO, USA

fYear

2015

fDate

17-22 May 2015

Firstpage

1

Lastpage

4

Abstract

This paper presents the design and characterization of a DC-DC converter operating at 1.2GHz with a maximum efficiency of 75% at 4.6W output power, and with a maximum output power of 13W at 58% efficiency. The microwave converter consists of a GaN class-E power amplifier coupled to a GaN class-E rectifier. The circuit is planar and exhibits a power density of approximately 0.65W/cm³ at the 75% efficiency point. The rectifier can be operated with input gate drive or selfsynchronously with a single RF input.

Keywords

DC-DC power convertors; III-V semiconductors; gallium compounds; microwave power amplifiers; rectifiers; wide band gap semiconductors; DC-DC converter; GaN; class-E power amplifier; efficiency 58 percent; frequency 1.2 GHz; microwave converter; power 4.6 W; self-synchronous rectifier; CMOS integrated circuits; Gallium arsenide; Gallium nitride; Lead; MOSFET; Rectifiers; Switches; DC-DC converters; harmonic terminations; high efficiency power amplifiers; rectifiers;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium (IMS), 2015 IEEE MTT-S International

Conference_Location

Phoenix, AZ

Type

conf

DOI

10.1109/MWSYM.2015.7166833

Filename

7166833