DocumentCode
3285411
Title
Effect of Graded Base Doping on the Gain of SiC BJT
Author
Zhao, J.H. ; Zhang, J. ; Li, X. ; Sheng, K.
fYear
2005
fDate
Dec. 7-9, 2005
Firstpage
398
Lastpage
399
Keywords
Design optimization; Doping profiles; MOSFETs; Passivation; Performance gain; Power engineering and energy; Power engineering computing; Silicon carbide; Spontaneous emission; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Device Research Symposium, 2005 International
Print_ISBN
1-4244-0083-X
Type
conf
DOI
10.1109/ISDRS.2005.1596154
Filename
1596154
Link To Document