• DocumentCode
    3285503
  • Title

    Adjustment of bipolar transistors models parameters

  • Author

    Ljumarov, P.P.

  • Volume
    01
  • fYear
    2008
  • fDate
    23-25 Sept. 2008
  • Firstpage
    182
  • Lastpage
    182
  • Abstract
    It is proposed algorithm constructing three grid data, compact and high accuracy describing bipolar transistor model behaviour in large signal mode, in widely currents scope.
  • Keywords
    bipolar transistors; semiconductor device models; bipolar transistors; grid data; large signal mode; model parameters; parameter adjustment; Bipolar transistors; Etching; Nanotechnology; Plasma applications; Plasma chemistry; Plasma materials processing; Plasma measurements; Plasma temperature; Silicon; Temperature measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electronic Instrument Engineering, 2008. APEIE 2008. 9th International Conference on Actual Problems of
  • Conference_Location
    Novosibirsk
  • Print_ISBN
    978-1-4244-2825-0
  • Type

    conf

  • DOI
    10.1109/APEIE.2008.4897090
  • Filename
    4897090
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3285503