• DocumentCode
    3285566
  • Title

    Carrier recombination mechanism at SiO2/Si interface studied by a photo-thermal and a surface photo-voltage spectroscopy

  • Author

    Saisho, T. ; Sakai, K. ; Hayashi, H. ; Sato, S. ; Fukuyama, A. ; Suemitsu, M. ; Ikari, T.

  • fYear
    2005
  • fDate
    Dec. 7-9, 2005
  • Firstpage
    414
  • Lastpage
    415
  • Keywords
    Absorption; Electron optics; Etching; Optical films; Radiative recombination; Scanning electron microscopy; Semiconductor films; Spectroscopy; Spontaneous emission; Substrates;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Device Research Symposium, 2005 International
  • Print_ISBN
    1-4244-0083-X
  • Type

    conf

  • DOI
    10.1109/ISDRS.2005.1596162
  • Filename
    1596162
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3285566