DocumentCode
3286069
Title
Effect of silicon substrate on the transmission characteristics of integrated antenna
Author
Kikkawa, T. ; Rashid, A.B.M.H. ; Watanabe, S.
Author_Institution
Res. Center for Nanodevices & Syst., Hiroshima Univ., Japan
fYear
2003
fDate
15-17 Oct. 2003
Firstpage
144
Lastpage
145
Abstract
The basic characteristics of integrated dipole antennas on a Si substrate for use in on-chip wireless interconnects have been studied. 2 mm long and 10 μm wide integrated dipole antennas were fabricated on a Si substrate with a resistivity of 10 Ω-cm. and the transmission gain of the antenna was 38 dB at 20 GHz. The transmission gain could be improved by use of high resistivity Si substrates greater than 100 Ω-cm.
Keywords
antenna testing; dipole antennas; electrical resistivity; silicon; substrates; 10 micron; 2 mm; 20 GHz; 38 dB; Si; integrated dipole antennas; on-chip wireless interconnects; resistivity; silicon substrate; transmission characteristics; Aluminum; Antenna measurements; Conductivity; Dipole antennas; Frequency; Protons; Scattering parameters; Silicon; Transmitting antennas; Ultra large scale integration;
fLanguage
English
Publisher
ieee
Conference_Titel
Wireless Communication Technology, 2003. IEEE Topical Conference on
Print_ISBN
0-7803-8196-3
Type
conf
DOI
10.1109/WCT.2003.1321461
Filename
1321461
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