DocumentCode
3286396
Title
BSIM5 MOSFET Model
Author
Xi, Xuemei ; He, Jin ; Dunga, Mohan ; Wan, Hui ; Chan, Mansun ; Lin, Chung-Hsun ; Heydari, Babak ; Niknejad, Ali M. ; Hu, Chenming
Author_Institution
Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA
Volume
2
fYear
2004
fDate
18-21 Oct. 2004
Firstpage
920
Abstract
This paper summarizes BSIM5 MOSFET model for aggressively scaled CMOS technology which was released recently. Various new physical effects are timely addressed in the new physical core including more accurate physics that is easily extended to non-charge-sheet, completely continuous current and derivatives, and extendibility to non-traditional CMOS based devices including SOI and double-gate MOSFETs. The flexible architecture also enables the carry-over of BSFM4´s accurate modeling of numerous device behaviors attributable to device physics or technologies.
Keywords
CMOS integrated circuits; semiconductor device models; silicon-on-insulator; BSIM5 MOSFET model; CMOS technology; SOI; double-gate MOSFET; CMOS technology; Electronics industry; Helium; Hydrodynamics; MOSFET circuits; Manufacturing industries; Physics; Radio frequency; Semiconductor device manufacture; Semiconductor device modeling;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State and Integrated Circuits Technology, 2004. Proceedings. 7th International Conference on
Print_ISBN
0-7803-8511-X
Type
conf
DOI
10.1109/ICSICT.2004.1436657
Filename
1436657
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