• DocumentCode
    3288514
  • Title

    Electrical design and performance of a multichip module on a silicon interposer

  • Author

    Baez, F.M. ; Cranmer, M. ; Shapiro, Marc ; Audet, Jean ; Berger, D. ; Sprogis, E. ; Collins, Christopher M. ; Iyer, Srikrishna

  • Author_Institution
    Worldwide Packaging & 3D Integration Dev. Depts., IBM, East Fishkill, NY, USA
  • fYear
    2012
  • fDate
    21-24 Oct. 2012
  • Firstpage
    303
  • Lastpage
    306
  • Abstract
    A multichip module package has been designed in IBM´s silicon technology. The module consists of two chips of same size and type communicating horizontally through a silicon interposer to a large ASIC chip. The chip to chip links operate at 8 Gbps with a loss of 0.5 dB/mm and reflections <; 20 dB. All links are skew matched to within 2 ps. Model to hardware correlation was performed and trace loss is within 0.1 dB of modeling data. The input to the module consists of a high speed RF signal and the module was optimized for board to package transition. Outputs of the module are 15Gbps high speed links. Both input and output signals go up or down a through silicon via (TSV) in the silicon interposer as part of their electrical paths. TSV parameters do not limit the electrical performance of the module.
  • Keywords
    application specific integrated circuits; multichip modules; silicon; three-dimensional integrated circuits; ASIC chip; IBM silicon technology; TSV; bit rate 15 Gbit/s; bit rate 8 Gbit/s; multichip module; silicon interposer; through silicon via; Ceramics; Correlation; Hardware; Impedance; Loss measurement; Silicon; Through-silicon vias;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electrical Performance of Electronic Packaging and Systems (EPEPS), 2012 IEEE 21st Conference on
  • Conference_Location
    Tempe, AZ
  • Print_ISBN
    978-1-4673-2539-4
  • Electronic_ISBN
    978-1-4673-2537-0
  • Type

    conf

  • DOI
    10.1109/EPEPS.2012.6457902
  • Filename
    6457902