DocumentCode
3288514
Title
Electrical design and performance of a multichip module on a silicon interposer
Author
Baez, F.M. ; Cranmer, M. ; Shapiro, Marc ; Audet, Jean ; Berger, D. ; Sprogis, E. ; Collins, Christopher M. ; Iyer, Srikrishna
Author_Institution
Worldwide Packaging & 3D Integration Dev. Depts., IBM, East Fishkill, NY, USA
fYear
2012
fDate
21-24 Oct. 2012
Firstpage
303
Lastpage
306
Abstract
A multichip module package has been designed in IBM´s silicon technology. The module consists of two chips of same size and type communicating horizontally through a silicon interposer to a large ASIC chip. The chip to chip links operate at 8 Gbps with a loss of 0.5 dB/mm and reflections <; 20 dB. All links are skew matched to within 2 ps. Model to hardware correlation was performed and trace loss is within 0.1 dB of modeling data. The input to the module consists of a high speed RF signal and the module was optimized for board to package transition. Outputs of the module are 15Gbps high speed links. Both input and output signals go up or down a through silicon via (TSV) in the silicon interposer as part of their electrical paths. TSV parameters do not limit the electrical performance of the module.
Keywords
application specific integrated circuits; multichip modules; silicon; three-dimensional integrated circuits; ASIC chip; IBM silicon technology; TSV; bit rate 15 Gbit/s; bit rate 8 Gbit/s; multichip module; silicon interposer; through silicon via; Ceramics; Correlation; Hardware; Impedance; Loss measurement; Silicon; Through-silicon vias;
fLanguage
English
Publisher
ieee
Conference_Titel
Electrical Performance of Electronic Packaging and Systems (EPEPS), 2012 IEEE 21st Conference on
Conference_Location
Tempe, AZ
Print_ISBN
978-1-4673-2539-4
Electronic_ISBN
978-1-4673-2537-0
Type
conf
DOI
10.1109/EPEPS.2012.6457902
Filename
6457902
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