DocumentCode
3289592
Title
Linear and nonlinear optical properties of quantum well with position-dependent effective mass
Author
Honarasa, G. ; Keshavarz, A. ; Zamani, Najmeh
Author_Institution
Dept. of Phys., Shiraz Univ. of Technol., Shiraz, Iran
fYear
2012
fDate
13-16 Dec. 2012
Firstpage
1
Lastpage
4
Abstract
Optical properties of quantum well nanostructure for typical GaAs/AlxGa1-xAs are investigated in a new approach. By using the point canonical transformation method and numerical solution of the Schrödinger equation, the energy levels and wave functions of electrons in the quantum well confinement potential are calculated. Then, the effect of position-dependent effective mass on the intersubband optical absorption coefficient and the refractive index changes of the quantum well calculated by compact density matrix method, are studied. Results are compared with the case of constant mass. Our results show that with considering spatially varying electron effective mass linear and nonlinear optical properties increases and shifts toward the lower energies. Researches on this matter open a new field in fundamental and applied physics, and also offer a wide range of potential applications for photonic devices.
Keywords
III-V semiconductors; Schrodinger equation; absorption coefficients; aluminium compounds; effective mass; gallium arsenide; nanostructured materials; nonlinear optics; numerical analysis; refractive index; semiconductor quantum wells; wave functions; GaAs-AlxGa1-xAs; Schrodinger equation; compact density matrix method; electron wave functions; energy levels; intersubband optical absorption coefficient; numerical solution; point canonical transformation method; position-dependent effective mass; quantum well confinement potential; quantum well nanostructure; refractive index; spatially varying electron effective mass nonlinear optical properties; Electric potential; Gallium arsenide; Optical Properties; Point Canonical Transformation;
fLanguage
English
Publisher
ieee
Conference_Titel
Photonics Global Conference (PGC), 2012
Conference_Location
Singapore
Print_ISBN
978-1-4673-2513-4
Type
conf
DOI
10.1109/PGC.2012.6457965
Filename
6457965
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